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Preliminary Preliminary
Product Description
Sirenza Microdevices' SGA-9189 is a high performance amplifier designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.
SGA-9189
Silicon Germanium HBT Amplifier
Product Features
Typical Gmax, OIP3, P1dB @ 5V,180mA
25 23 21 19 17 15 13 11 9 7 5
Gmax
OIP3, P1dB (dBm)
OIP3
P1dB
44 42 40 38 36 34 32 30 28 26 24
Gmax (dB)
* * * * * * *
DC-3 GHz Operation 39 dBm Ouput IP3 Typical at 1.96 GHz 12 dB Gain Typical at 1.96 GHz 26 dBm P1dB Typical at 1.96 GHz 2.5 dB NF Typical at 0.9 GHz Cost Effective 3-5 V Operation
Applications
* * * * Wireless Infrastructure Driver Amplifiers CATV Amplifiers Wireless Data, WLL Amplifiers AN-021 contains detailed application circuits
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Frequency (GHz)
Symbol
Device Characteristics, T = 25C VCE = 5V, ICQ =180mA (unless otherw ise noted) Maximum Available Gain ZS=ZS*, ZL=ZL* Power Gain ZS=ZSOPT, ZL=ZLOPT Output 1dB Compression Point ZS=ZSOPT, ZL=ZLOPT Output Third Order Intercept Point ZS=ZSOPT, ZL=ZLOPT, POUT= +13 dBm per tone Noise Figure ZS=ZSOPT, ZL=ZLOPT Collector - Emitter Breakdown Voltage DC current gain Thermal Resistance (junction-to-lead) Device Operating Voltage (collector-to-emitter) Device Operating Current (collector-to-emitter)
Test Frequency [1] 100% Tested [2] Sample Tested f = 900 MHz f = 1960 MHz f = 900 MHz [1] f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz [2] f = 900 MHz f = 1960 MHz
Units
Min.
Typ. 20.5 13.2 17.8 11.1 26.3 25.6 38.8 38.9 2.5 3.9
Max.
GMAX G P 1dB OIP3 NF B V C EO hFE Rth VCE ICE
dB dB dB m dB m dB V 7.5 120 C/W V mA
8.5 180 47 5.5 190 300
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev B
1
Preliminary SGA-9189 SiGe HBT Amplifier Absolute Maximum Ratings
MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the device operating conditions should also satisfy the following expression: PDC - POUT < (TJ - TL) / RTH where: PDC = ICE * VCE (W) POUT = RF Output Power (W) TJ = Junction Temperature (C) TL = Lead Temperature (pin 4) (C) RTH = Thermal Resistance (C/W)
Parameter Base C urrent C ollector C urrent C ollector - Emi tter Voltage C ollector - Base Voltage Emi tter - Base Voltage Operati ng T mperature e Storage T mperature Range e Operati ng Juncti on T mperature e Power D i ssi pati on Symbol IB ICE V C EO V C BO V EBO TOP Tstor TJ PDISS Value 5 200 7.0 20 4.8 -40 to +85 -40 to +150 +150 1.4 U nit mA mA V V V C C C W
Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nuous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page 1.
Typical Performance - Engineering Application Circuits (See AN-021)
Freq (MHz ) 945 1960 2140 2440
1
VCE (V) 5 5 5 5
ICQ (mA) 184 179 180 180
P1dB OIP31 (dBm) (dBm) 26.2 26.0 25.5 25.5 38.1 39.1 38.4 38.7
Gain (dB) 18.3 11.7 11.8 10.4
S11 (dB) -18 -15 -20 -20
S 22 (dB) -16 -18 -20 -20
NF (dB) 2.5 3.9 2.6 3.1
ZSOPT ( ) 6.8 - j0.85 7.6 - j11.2 18.1 + j3.4 5.6 - j15.1
ZLOPT ( ) 16 + j5.9 22.8 + j0.7 23.8 - j9.0 23.1 - j2.7
POUT= +10 dBm per tone for VCE=5V, 1 MHz tone spacing
Freq (MHz ) 945 1960 2440
2
VCE (V) 3 3 3
ICQ (mA) 165 162 165
P1dB OIP31 (dBm) (dBm) 22.1 22.4 23.2 34.3 35.0 35.3
Gain (dB) 17.7 11.8 9.9
S11 (dB) -18 -18 -20
S 22 (dB) -11 -16 -15
NF (dB) 2.1 2.2 2.6
ZSOPT ( ) 9.6 - j1.6 7.8 - j13.1 8.1 - j16.0
ZLOPT ( ) 11.0 + j1.4 19.3 - j2.9 21.0 - j6.5
POUT= +6 dBm per tone for VCE=3V, 1 MHz tone spacing
Data above represents typical performance of the application circuits noted in Application Note AN-021. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative.
C
B ZLOPT
ZSOPT
E
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev B
2
Preliminary SGA-9189 SiGe HBT Amplifier
De-embedded S-Parameters (ZS=ZL=50 Ohms, VCE=5V, ICQ=185mA, 25 C)
45 35
Insertion Gain & Isolation
5 -5
Gain vs. Temp (dB)
30 25 20 15 10 5 0
Insertion Gain vs Temperature
Isolation (dB)
Gain (dB)
25 15 5 -5 0 1 2 3 4 5 6
Isolation
-15 -25
T = -40, 25, 85C
Gmax Gain
-35 -45 7 8
-5 -10 0 1 2 3 4 5 6 7 8
Frequency (GHz) S11 vs Frequency
1.0 0.5
Frequency (GHz) S22 vs Frequency
1.0 2.0 0.5 2.0
4 GHz 5 GHz 3 GHz
4 GHz 3 GHz
5.0 0.2
5 GHz
0.2
2 GHz 8 GHz
0.5 1.0 2.0 5.0
5.0
2 GHz 1 GHz
inf 0.0 0.2 0.5 1.0 2.0
1 GHz
0.0 0.2
8 GHz
5.0
inf
S11
0.2 5.0 0.2 5.0
50 MHz
S22 50 MHz
0.5
2.0
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with Z S=Z L=50. The data represents typical performace of the device. De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
400 350 300
DC-IV Curves
Ib = 0.4 - 3.6 mA , 0.4 mA steps T=25C
IC (mA)
250 200 150 100 50 0 0 2 4 6 8
VCE (V)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev B
3
Preliminary
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
SGA-9189 SiGe HBT Amplifier
Part Number Ordering Information
Part Number SGA-9189 Reel Siz e 7" Devices/Reel 1000
Pin Description
Pin #
1 2 3 4
Function
B a se Emitter Collector Emitter RF Input
Description
Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. RF Output Same as Pin 2
Part Symbolization The part will be symbolized with the "P1" designator and a dot signifying pin 1 on the top surface of the package.
Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items should be implemented to maximize MTTF and RF performance. 1. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL] 2. Incorporate a large ground pad area with multiple plated-through vias around pin 4 of the device. [CRITICAL] 3. Use two point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as close to the ground tab (pin 4) as possible. [RECOMMENDED] 4. Use 2 ounce copper to improve the PCB's heat spreading capability. [RECOMMENDED]
Package Dimensions
.161
3
.177 .068
P1
.096
.016 .019 .118
4
1
2
.041
.059
.015
DIMENSIONS ARE IN INCHES
Recommended Mounting Configuration for Optimum RF and Thermal Performance
Ground Plane Plated Thru Holes (0.020" DIA) SOT-89 Package
Machine Screws
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev B
4

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